2SA1718

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1718 DESCRIPTION ·With TO-220F package ·High DC current gain. ·Low collector saturation voltage. ·DARLINGTON APPLICATIONS ·Ideal for motor drviers and solenoid drivers application PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -100 -100 -7 -5 -10 -0.5 20 UNIT V V V A A A PC Collector dissipation Ta=25℃ 2.0 150 -55~150 W Tj Tstg Junction temperature Storage temperature ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SA1718 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-30mA; IB=0 -100 V VCEsat Collector-emitter saturation voltage IC=-2A ; IB=-2mA -1.5 V VBEsat Base-emitter saturation voltage IC=-2A ; IB=-2mA -2.0 V ICBO Collector cut-off current VCB=-100V;IE=0 -10 μA IEBO Emitter cut-off current VEB=-7V;IC=0 -5.0 mA hFE-1 DC current gain IC=-2A ; VCE=-2V 2000 20000 hFE-2 DC current gain IC=-4A ; VCE=-2V 500 hFE classifications M 2000-5000 L 4000-10000 K 8000-20000 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1718 Fig.2 Outline dimensions 3