2SA1725

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1725 DESCRIPTION ·With TO-220F package ·Complement to type 2SC4511 APPLICATIONS ·Audio and general purpose PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -80 -80 -6 -6 -3 30 150 -55~150 UNIT V V V A A W ℃ ℃ PC Tj Tstg Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE COB fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-25mA ; IB=0 B 2SA1725 MIN -80 TYP. MAX UNIT V IC=-2A ;IB=-0.2A B -0.5 -10 -10 50 150 20 180 V μA μA VCB=-80V; IE=0 VEB=-6V; IC=0 IC=-2A ; VCE=-4V IE=0; VCB=-10V;f=1MHz IE=0.5A ; VCE=-12V pF MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=-3.0A;IB1=-IB2=-0.3A VCC=-30V ,RL=10Ω 0.18 1.10 0.21 μs μs μs hFE Classifications O 50-100 P 70-140 Y 90-180 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1725 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1725 4