INCHANGE Semiconductor
Product Specification
Silicon PNP Power Transistor
2SA1741
DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= -60V(Min) ·High DC Current Gain: hFE= 100(Min)@ (VCE= -2V , IC= -1A) ·Low Saturation Voltage: VCE(sat)= -0.3V(Max)@ (IC= -3A, IB= -0.15A)
B
APPLICATIONS ·This type of power transistor is developed for high-speed switching and features a high hFE at low VCE(sat),which is ideal for use as a driver in DC/DC converters and actuators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL VCBO VCEO VEBO IC ICM IB
B
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Pulse Base Current-Continuous Total Power Dissipation @TC=25℃
VALUE -100 -60 -7.0 -5.0 -10 -2.5 25
UNIT V V V A A A
PT Total Power Dissipation @Ta=25℃ TJ Tstg Junction Temperature Storage Temperature 2.0 150 -55~150
W
℃ ℃
INCHANGE Semiconductor
Product Specification
Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEX(SUS) VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2 ICBO ICER ICEX IEBO hFE-1 hFE-2 hFE-3 COB fT PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain Output Capacitance Current-Gain—Bandwidth Product CONDITIONS IC= -3.0A ; IB= -0.3A, L= 1mH IC= -3.0A ; IB1=-IB2= -0.3A, VBE(OFF)=1.5V, L=180μH,clamped IC= -3A; IB= -0.15A
B
2SA1741
MIN -60 -60
TYP.
MAX
UNIT V V
-0.3 -0.5 -1.2 -1.5 -10 -1.0 -10 -1.0 -10 100 100 60 130 80 400
V V V V μA mA μA mA μA
IC= -4A; IB= -0.2A
B
IC= -3A; IB= -0.15A
B
IC= -4A; IB= -0.2A
B
VCB= -60V ; IE=0 VCE= -60V ; RBE= 50Ω,Ta=125℃ VCE= -60V; VBE(off)= -1.5V VCE= -60V; VBE(off)= -1.5V,Ta=125℃ VEB= -5V; IC=0 IC= -0.5A ; VCE= -2V IC= -1.0A ; VCE= -2V IC= -3.0A ; VCE= -2V IE=0 ; VCB= -10V;f= 1.0MHz IC=-0.5A ; VCE= -10V
pF MHz
Switching times ton tstg tf Turn-on Time Storage Time Fall Time IC= -3.0A ,RL= 17Ω, IB1= -IB2= -0.15A,VCC≈-50V 0.3 1.5 0.3 μs μs μs
hFE-2 Classifications M 100-200 L 150-300 K 200-400
2
INCHANGE Semiconductor
Product Specification
Silicon PNP Power Transistor
2SA1741
3
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