2SA1746

INCHANGE Semiconductor Product Specification Silicon PNP Power Transistor 2SA1746 DESCRIPTION ·Low Collector Saturation Voltage :VCE(sat)= -0.5(V)(Max)@IC= -5A ·Good Linearity of hFE APPLICATIONS ·Designed for chopper regulator, switch and purpose applications general ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -12 A ICM Collector Current-Peak -20 A IB B Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature -4 A PC 60 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ INCHANGE Semiconductor Product Specification Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SA1746 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA ; IB= 0 -50 V VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -80mA B -0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -5A; IB= -80mA B -1.2 V ICBO Collector Cutoff Current VCB= -70V ; IE= 0 -10 μA IEBO Emitter Cutoff Current VEB= -6V; IC= 0 -10 μA hFE DC Current Gain IC= -5A ; VCE= -1V 50 COB Output Capacitance IE= 0 ; VCB= -10V;f= 1.0MHz 400 pF fT Current-Gain—Bandwidth Product IE= 1A ; VCE= -12V 25 MHz Switching Times ton Turn-on Time IC= -5A , RL= 4Ω, IB1= -IB2= -80mA,VCC= -20V 0.5 μs tstg Storage Time 0.6 μs tf Fall Time 0.3 μs 2