2SA1757

INCHANGE Semiconductor Product Specification Silicon PNP Power Transistor 2SA1757 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -60V(Min) ·High Switching Speed ·Low Saturation Voltage: VCE(sat)= -0.3V(Max)@ (IC= -3A, IB= -0.15A) ·Wide Area of Safe Operation B APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO Collector-Base Voltage -100 V Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ -10 A 2 W PC Collector Power Dissipation @TC=25℃ TJ Tstg Junction Temperature 25 150 ℃ ℃ Storage Temperature -55~150 INCHANGE Semiconductor Product Specification Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEO(SUS) V(BR)EBO V(BR)CBO VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2 ICBO IEBO hFE fT COB PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain—Bandwidth Product Output Capacitance CONDITIONS IC= -1mA ; IB= 0 IC= -3A ; IB= -0.3A; L= 1mH IE= -50μA ; IC= 0 IE= -50μA ; IC= 0 IC= -3A; IB= -0.15A B 2SA1757 MIN -60 -60 -5 -100 TYP. MAX UNIT V V V V -0.3 -0.5 -1.2 -1.5 -10 -10 160 80 130 320 V V V V μA μA IC= -4A; IB= -0.2A B IC= -3A; IB= -0.15A B IC= -4A; IB= -0.2A B VCB= -100V ; IE=0 VEB= -5V; IC=0 IC= -1A ; VCE= -2V IE= 0.5A;VCE= -10V; ftest= 30MHz IE= 0; VCB= -10V; ftest= 1MHz MHz pF Switching times ton tstg tf Turn-on Time Storage Time Fall Time RL= 10Ω, VCC= -30V IC= -3A; IB1= -IB2= -0.15A 0.3 1.5 0.3 μs μs μs 2