2SA1789

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1789 DESCRIPTION ·With TO-247 package ·Complement to type 2SC4653 ·Low collector saturation voltage APPLICATIONS ·For audio output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION · Absolute maximum ratings(Tc=25℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE -60 -60 -5 -12 80 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1789 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=-25mA; IB=0 IC=-1mA; IE=0 IE=-1mA; IC=0 IC=-6A;IB=-0.6 A IC=-6A;IB=-0.6 A VCB=-60V; IE=0 VEB=-5V; IC=0 IC=-2A ; VCE=-2V 60 MIN -60 -60 -5 -0.5 -2.0 -10 -10 320 TYP. MAX UNIT V V V V V μA μA hFE classifications D 60-120 E 100-200 F 160-320 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1789 Fig.2 Outline dimensions 3