Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1803
DESCRIPTION ·With TO-3PML package ·Complement to type 2SC4688 APPLICATIONS ·Power amplifier applications ·Recommend for 40W high fidelity audio frequency amplifier output stage PINNING
PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION
·
Absolute maximum ratings(Ta=25℃)
SYMBOL VCBO VCEO VEBO IC ICM IB
B
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃
CONDITIONS Open emitter Open base Open collector
VALUE -80 -80 -5 -6 -12 -0.6 55 150 -55~150
UNIT V V V A A A W ℃ ℃
PC Tj Tstg
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=-50mA; IB=0 IC=-5A;IB=-0.5 A IC=-3A ; VCE=-5V VCB=-80V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-3A ; VCE=-5V IC=-1A ; VCE=-5V IE=0; VCB=-10V;f=1MHz 55 35 30 290 MIN -80 TYP.
2SA1803
MAX
UNIT V
-2.0 -1.5 -5 -5 160
V V μA μA
MHz pF
hFE-1 classifications R 55-110 O 80-160
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1803
Fig.2 Outline dimensions (unindicated tolerance:±0.1mm)
3
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1803
4
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