2SA1804

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1804 DESCRIPTION ·With TO-3PML package ·Complement to type 2SC4689 APPLICATIONS ·Power amplifier applications ·Recommend for 55W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION · Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -120 -120 -5 -8 -16 -0.8 70 150 -55~150 UNIT V V V A A A W ℃ ℃ PC Tj Tstg Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SA1804 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0 -120 V VCE(sat) VBE Collector-emitter saturation voltage IC=-6A;IB=-0.6 A IC=-4A ; VCE=-5V -2.0 V Base-emitter voltage -1.5 V μA μA ICBO Collector cut-off current VCB=-120V; IE=0 -5 IEBO Emitter cut-off current VEB=-5V; IC=0 -5 hFE-1 DC current gain IC=-1A ; VCE=-5V 55 160 hFE-2 DC current gain IC=-4A ; VCE=-5V 35 fT COB Transition frequency IC=-1A ; VCE=-5V IE=0; VCB=10V;f=1MHz 30 MHz Output capacitance 420 pF hFE classifications R 55-110 O 80-160 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1804 Fig.2 Outline dimensions (unindicated tolerance:±0.1mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1804 4 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1804 5