2SA1859

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1859 2SA1859A DESCRIPTION ·With TO-220F package ·Complement to type 2SC4883/4883A APPLICATIONS ·For audio output driver and TV velocity-modulation applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER 2SA1859 VCBO Collector-base voltage 2SA1859A 2SA1859 VCEO Collector-emitter voltage 2SA1859A VEBO IC IB B CONDITIONS VALUE -150 UNIT Open emitter -180 -150 Open base -180 Open collector -6 -2 -1 TC=25℃ 20 150 -55~150 V V Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature V A A W ℃ ℃ PC Tj Tstg Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SA1859 IC=-10mA ; IB=0 B 2SA1859 2SA1859A CONDITIONS MIN -150 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V -180 2SA1859A VCEsat Collector-emitter saturation voltage 2SA1859 2SA1859A IEBO hFE fT COB Emitter cut-off current DC current gain Transition frequency Output capacitance IC=-0.7A;IB=-70mA VCB=-150V;IE=0 VCB=-180V;IE=0 VEB=-6V; IC=0 IC=-0.7A ; VCE=-10V IC=-0.7A ; VCE=-12V IE=0 ; VCB=-10V;f=1MHz -1.0 -10 -10 -10 60 60 30 240 V μA μA μA ICBO Collector cut-off current MHz pF Switching time ton ts tf Turn-on time Storage time Fall time IC=-1A ;IB1=-IB2=-0.1A VCC=-20V ,RL=20Ω 0.50 1.00 0.50 μs μs μs 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1859 2SA1859A Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1859 2SA1859A 4