2SA1869

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1869 DESCRIPTION ·With TO-220F package ·Complement to type 2SC4935 APPLICATIONS ·Power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -50 -50 -5 -3 -0.3 10 150 -55~150 UNIT V V V A A W ℃ ℃ PC Tj Tstg Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-10mA ; IB=0 B 2SA1869 MIN -50 TYP. MAX UNIT V IC=-2A ;IB=-0.2A B -0.3 -0.8 -0.6 -1.0 -1.0 -1.0 V V μA μA IC=-0.5A ; VCE=-2V VCB=-50V; IE=0 VEB=-5V; IC=0 IC=-0.5A ; VCE=-2V IC=-2.5A ; VCE=-2V IE=0; VCB=-10V;f=1MHz IC=-0.5A ; VCE=-2V 70 30 240 35 100 pF MHz hFE-1 Classifications O 70-140 Y 120-240 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1869 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1869 4