2SA1879

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1879 DESCRIPTION ·With ITO-220 package ·Switching power transistor ·Low collector saturation voltage PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (ITO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -80 -80 -7 -7 -14 -1.5 -2 25 150 -55~150 UNIT V V V A A A A W ℃ ℃ IBM PT Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 5.0 UNIT ℃/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1879 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat ICBO Collector cut-off current ICEO IEBO hFE fT Emitter cut-off current DC current gain Transition frequency At rated volatge IC=-3.5A ; VCE=-2V IC=-0.7A ; VCE=-10V 70 50 MHz -0.1 mA At rated volatge -0.1 mA PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage CONDITIONS IC=-0.1A ;IB=0 IC=-3.5A; IB=-0.35A IC=-3.5A; IB=-0.35A MIN -80 -0.3 -1.2 TYP. MAX UNIT V V V Switching times ton ts tf Turn-on time Storage time Fall time IC=-3.5A;IB1=-IB2=-0.35A , RL=8Ω;VBB2=-4V 0.3 1.5 0.2 μs μs μs 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1879 Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) 3