2SA1907

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1907 DESCRIPTION ・With TO-3PML package ・Complement to type 2SC5099 APPLICATIONS ・Audio and general purpose PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Fig.1 simplified outline (TO-3PML) and symbol Base ・ Absolute maximum ratings(Tc=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -80 -80 -6 -6 -3 60 150 -55~150 UNIT V V V A A W ℃ ℃ 1 Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=-50mA; IB=0 IC=-2A;IB=-0.2 A VCB=-80V; IE=0 VEB=-6V; IC=0 IC=-2A ; VCE=-4V IC=-0.5A ; VCE=-12V IE=0; VCB=10V;f=1MHz 50 20 150 MIN -80 TYP. 2SA1907 MAX UNIT V -0.5 -10 -10 180 V μA μA MHz pF Switching times ton ts tf Turn-on time Storage time Fall time IC=-3A;RL=10Ω IB1=-IB2=-0.3A;VCC=-30V 0.18 1.10 0.21 μs μs μs hFE classifications O 50-100 P 70-140 Y 90-180 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1907 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1907 4