2SA1942

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1942 DESCRIPTION ・With TO-3PL package ・Complement to type 2SC5199 APPLICATIONS ・Power amplifier applications ・Recommended for 80W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-3PL) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -160 -160 -5 -12 -1.2 120 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SA1942 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 -160 V VCEsat Collector-emitter saturation voltage IC=-8A ;IB=-0.8A -2.5 V VBE Base-emitter voltage IC=-6A ; VCE=-5V -1.5 V ICBO Collector cut-off current VCB=-160V; IE=0 -5 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -5 μA hFE-1 DC current gain IC=-1A ; VCE=-5V 55 160 hFE-2 DC current gain IC=-6A ; VCE=-5V 35 fT Transition frequency IC=-1A ; VCE=-5V 30 MHz COB Collector output capacitance IE=0; f=1MHz;VCB=-10V 320 pF hFE-1 classifications R 55-110 O 80-160 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1942 Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1942 4