INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
2SA2151
DESCRIPTION ·High Collector-Emitter Breakdown VoltageV(BR)CEO= -200V(Min) ·Good Linearity of hFE ·Complement to Type 2SC6011
APPLICATIONS ·Designed for audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
-200
V
VCEO
Collector-Emitter Voltage
-200
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-15
A
IB
B
Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature
-4
A
PC
160
W
TJ
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SA2151
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= -50mA ; IB= 0
-200
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -5A; IB= -0.5A
B
-0.5
V
ICBO
Collector Cutoff Current
VCB= -200V ; IE= 0
-10
μA
IEBO
Emitter Cutoff Current
VEB= -6V; IC= 0
-10
μA
hFE
DC Current Gain
IC= -3A ; VCE= -4V
50
180
COB
Output Capacitance
IE= 0 ; VCB= -10V;f= 1.0MHz
450
pF
fT
Current-Gain—Bandwidth Product
IE= 0.5A ; VCE= -12V
20
MHz
hFE Classifications O 50-100 P 70-140 Y 90-180
isc Website:www.iscsemi.cn
2
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