2SA483

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA483 DESCRIPTION ·High Collector Current:: IC= -1.5A ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) ·Complement to Type 2SC783 APPLICATIONS ·Power amplifier applications ·Vertical output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A IE Emitter Current-Continuous Total Power Dissipation @ TC=25℃ Junction Temperature 1.5 A PC 20 W TJ 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SA483 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0 -150 V V(BR)CBO Collector-Base Breakdown Voltage IC= -0.5mA ; IE= 0 -150 V VCE(sat) VBE(on) ICBO Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA B -1.8 V Base-Emitter On Voltage IC= -0.5A ; VCE= -10V VCB= -150V ; IE= 0 -1.8 V μA μA Collector Cutoff Current -100 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -100 hFE DC Current Gain IC= -0.1A ; VCE= -10V 30 240 fT Current-Gain—Bandwidth Product IC= -0.1A ; VCE= -10V 10 MHz COB Output Capacitance VCB= -10V; ftest= 1MHz 50 pF hFE-1 Classifications R 30-80 O 70-140 Y 120-240 isc Website：www.iscsemi.cn 2