2SA627

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA627 DESCRIPTION ·With TO-3 package ·Wide area of safe operation ·Large current capability APPLICATIONS ·Power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE -100 -100 -5 -7 60 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-10mA ; IB=0 B 2SA627 MIN -100 -100 -5 TYP. MAX UNIT V V V IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-5A; IB=-0.5A IC=-5A; IB=-0.5A VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-2A ; VCE=-5V IC=-0.5A ; VCE=-10V -2.0 -2.5 -0.1 -0.1 30 15 120 V V mA mA MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA627 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3