2SA634

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA634 DESCRIPTION ·With TO-202 package ·Complement to type 2SC1096 ·High current capability APPLICATIONS ·Audio frequency power amplifier ·Low speed switching PINNING(see Fig.2) PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-202) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25℃ CONDITIONS Open emitter Open base Open collector VALUE -40 -30 -5 -3.0 -6.0 -0.6 1.2 UNIT V V V A A A PT Total power dissipation TC=25℃ 10 150 -55~150 W Tj Tstg Junction temperature Storage temperature ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SA634 MAX UNIT VCEsat Collector-emitter saturation voltage IC=-3.0A ;IB=-0.3 A -2.0 V VBEsat Base-emitter saturation voltage IC=-3.0A ;IB=-0.3 A -2.0 V V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 -30 V hFE-1 DC current gain IC=-20mA ; VCE=-5V 20 hFE-2 DC current gain IC=-1A ; VCE=-5V 40 250 ICBO Collector cut-off current VCB=-30V; IE=0 -1.0 μA IEBO Emitter cut-off current VEB=-3V; IC=0 -1.0 μA COB Output capacitance IE=0; VCB=-10V;f=1MHz 75 pF fT Transition frequency IC=-0.1A ; VCE=-5V 55 MHz hFE-2 Classifications N 40-60 M 50-100 L 80-160 K 120-250 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA634 Fig.2 outline dimensions 3