2SA636

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA636 2SA636A DESCRIPTION ·With TO-202 package ·Complement to type 2SC1098/1098A ·High breakdown voltage ·High transition frequency APPLICATIONS ·For audio frequency power amplifier and low speed switching applications PINNING(see Fig.2) PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-202) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO PARAMETER Collector-base voltage 2SA636 VCEO Collector-emitter voltage 2SA636A VEBO IC ICM IB B CONDITIONS Open emitter VALUE -70 -45 UNIT V Open base -60 Open collector -5 -3 -5 -0.6 TC=25℃ 10 V Emitter-base voltage Collector current Collector current-peak Base current V A A A PT Total power dissipation Ta=25℃ 1.2 150 -55~150 W Tj Tstg Junction temperature Storage temperature ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SA636 2SA636A MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=-1.5A ;IB=-0.15A -0.5 -2.0 V VBEsat ICBO Base-emitter saturation voltage IC=-1.5A ;IB=-0.15A VCB=-45V; IE=0 -0.8 -2.0 V μA μA Collector cut-off current -1 IEBO Emitter cut-off current VEB=-3V; IC=0 -1 hFE-1 DC current gain IC=-20mA ; VCE=-5V 20 hFE-2 DC current gain IC=-0.5A ; VCE=-5V 40 250 COB Output capacitance IE=0; VCB=-10V;f=1MHz 60 pF fT Transition frequency IC=-0.1A ; VCB=-5V 45 MHz hFE-2 classifications N 40-60 M 50-100 L 80-160 K 120-250 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA636 2SA636A Fig.2 outline dimensions 3