2SA648

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA648 DESCRIPTION ·With TO-3 package ·Wide area of safe operation APPLICATIONS ·For low frequency and large power switching applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE -120 -120 -6 -7 -11 60 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SA648 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0 -120 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0 -120 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 -6 V VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A -2.0 V VBEsat Base-emitter saturation voltage IC=-5A; IB=-0.5A -2.5 V ICBO Collector cut-off current VCB=-120V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-6V; IC=0 -0.1 mA hFE DC current gain IC=-3A ; VCE=-5V 30 120 fT Transition frequency IC=-1A ; VCE=-5V 10 MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA648 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3