Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA653
DESCRIPTION ·With TO-66 package ·High voltage: VCEO=-120V(min) APPLICATIONS ·Low frequency power amplifier color TV vertical deflection output applications
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION
Absolute maximum ratings(Ta=℃)
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE -150 -120 -6 -1.0 15 150 -55~150 UNIT V V V A W ℃ ℃
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
2SA653
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA ;IB=0
-120
V
V(BR)CBO
Collector-base breakdown voltage
IC=-1mA ;IE=0
-150
V
VCEsat
Collector-emitter saturation voltage
IC=-0.5A; IB=-50mA
-1.5
V
VBEsat
Base-emitter saturation voltage
IC=-0.5A; IB=-50mA
-2.0
V
ICBO
Collector cut-off current
VCB=-150V; IE=0
-10
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-10
μA
hFE
DC current gain
IC=-0.2A ; VCE=-5V
40
fT
Transition frequency
IC=-0.1A ; VCE=-10V
15
MHz
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA653
Fig.2 outline dimensions
3
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