2SA656

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA656 DESCRIPTION ·With TO-3 package ·Wide area of safe operation ·Complement to type 2SC519 APPLICATIONS ·For audio frequency and power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE -130 -130 -5 -7 50 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SA656 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0 -130 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0 -130 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-5A; IB=-1A -2.0 V VBEsat Base-emitter saturation voltage IC=-5A; IB=-1A -2.5 V ICBO Collector cut-off current VCB=-130V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 mA hFE DC current gain IC=-1A ; VCE=-5V 30 300 COB Collector output capacitance IE=0; VCB=-10V;f=1MHz 150 pF fT Transition frequency IC=-1A ; VCE=-10V 5 MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA656 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3