2SA670

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA670 DESCRIPTION ·With TO-220 package ·Low collector saturation voltage APPLICATIONS ·Inverters;converters ·Power amplification ·Switching regulator ,driver PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -50 -50 -5 -3 25 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-25mA ,IB=0 IC=-1mA; IE=0 IE=-1mA; IC=0 IC=-2A; IB=-0.2A VCB=-50V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-4V IC=-0.5A ; VCE=-10V 35 15 MIN -50 -50 -5 TYP. 2SA670 MAX UNIT V V V -1.0 -100 -100 200 V μA μA MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA670 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3