2SA671

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA671 DESCRIPTION ·Low Collector Saturation Voltage: VCE(SUS)= -1.0V(Max)@ IC= -2.0A ·DC Current Gain : hFE= 35-320@ IC= -0.5A ·Complement to Type 2SC1061 APPLICATIONS ·Designed for use in low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Total Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE -50 -50 -4 -3 -6 -0.5 25 150 -55~150 UNIT V V V A A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 5.0 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SA671 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 -50 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA ; IC= 0 -7 V VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A B -1.0 V VBE(on) Base-Emitter On Voltage IC= -1A ; VCE= -4V -1.5 V ICBO Collector Cutoff Current VCB= -25V ; IE= 0 -100 μA IEBO Emitter Cutoff Current VEB= -4V; IC= 0 -100 μA hFE-1 DC Current Gain IC= -0.1A ; VCE= -4V 35 320 hFE-2 DC Current Gain IC= -1A ; VCE= -4V 35 fT Current-Gain—Bandwidth Product IC= -0.5A;VCE= -4V; ftest= 1MHz 5 MHz hFE-1 Classifications A 35-70 B 60-120 C 100-200 D 160-320 isc Website：www.iscsemi.cn 2