2SA715

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA715 DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown VoltageV(BR)CEO= -35V (Min) ·Complement to Type 2SC1162 APPLICATIONS ·Designed for use in low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -35 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -2.5 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ -3.0 A 0.75 W PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 10 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SA715 MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 -35 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; RBE= ∞ -35 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A B -1.0 V VBE(on) Base-Emitter On Voltage IC= -1.5A ; VCE= -2V -1.5 V ICBO Collector Cutoff Current VCB= -35V; IE= 0 -20 μA hFE-1 DC Current Gain IC= -0.5A ; VCE= -2V 60 320 hFE-2 DC Current Gain IC= -1.5A ; VCE= -2V 20 fT Current-Gain—Bandwidth Product IC= -0.2A ; VCE= -2V 160 MHz hFE-1 Classifications B 60-120 C 100-200 D 160-320 isc Website：www.iscsemi.cn 2