2SA740

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA740 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) ·DC Current Gain : hFE= 40-140@ IC= -0.5A ·Complement to Type 2SC1448 APPLICATIONS ·Power amplifier applications. ·Vertical output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IE PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Emitter Current-Continuous Total Power Dissipation @ Ta=25℃ Total Power Dissipation @ TC=25℃ TJ Tstg Junction Temperature Storage Temperature Range VALUE -150 -150 -5 -1.5 1.5 1.5 W 25 150 -55~150 ℃ ℃ UNIT V V V A A PC isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SA740 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA ; IB= 0 -150 V V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA ; IE= 0 -150 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA ; IC= 0 -5 V VCE(sat) VBE(on) ICBO Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA B -1.5 V Base-Emitter On Voltage IC= -0.5A ; VCE= -10V -1.0 V μA μA Collector Cutoff Current VCB= -100V ; IE= 0 -20 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -10 hFE DC Current Gain IC= -0.5A ; VCE= -10V 40 140 COB Output Capacitance IE= -0; VCB= -10V; ftest= 1MHz IC= -0.5A;VCE= -10V 90 pF fT Current-Gain—Bandwidth Product 8 MHz isc Website：www.iscsemi.cn 2