2SA745

INCHANGE Semiconductor isc Product Specification 2SA745 isc Silicon PNP Power Transistor DESCRIPTION ·High Power Dissipation: PC= 70W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -100V(Min.) ·Complement to Type 2SC1403 APPLICATIONS ·Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -8 A IB B Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature -3 A PC 70 W Tj 150 ℃ Tstg Storage Temperature -65~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification 2SA745 isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ;IB= 0 B -100 V VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A B -1.5 V ICBO Collector Cutoff Current VCB= -100V; IE= 0 -1.0 mA IEBO Emitter Cutoff Current VEB= -6V; IC= 0 -1.0 mA hFE DC Current Gain IC= -3A ; VCE= -4V 30 fT Current-Gain—Bandwidth Product IE= 0.5A ; VCE= -12V 15 MHz Switching times tr Rise Time IC= -3A ,RL= 4Ω, VCC= -12V IB1= -0.2A; IB2= 0.1A 1.2 μs tstg Storage Time 2.0 μs tf Fall Time 0.55 μs isc Website：www.iscsemi.cn