2SA755

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA755 DESCRIPTION ·With TO-220 package ·Complement to type 2SC1419 ·Note:Type 2SA754 with short pin APPLICATIONS ·For low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE -50 -50 -4 -2 20 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO hFE-1 hFE-2 fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-50mA ,RBE=∞ IC=-5mA ,IE=0 IE=-5mA ,IC=0 IC=-1.5A; IB=-0.15A IC=-1A ; VCE=-4V VCB=-20V; IE=0 IC=-1A ; VCE=-4V IC=-0.1A ; VCE=-4V IC=-0.5A ; VCE=-4V 35 35 50 MIN -50 -50 -4 TYP. 2SA755 MAX UNIT V V V -1.3 -1.5 -100 200 V V μA MHz hFE-1 Classifications A 35-70 B 60-120 C 100-200 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA755 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3