2SA756

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA756 DESCRIPTION ·With TO-3 package ·Complement to type 2SC1030 APPLICATIONS ·For audio amplifier power output applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE -100 -80 -6 -6 50 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS IC=-50mA ;RBE=∞ MIN TYP. 2SA756 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage -80 V V(BR)CBO Collector-base breakdown voltage IC=-5mA ,IE=0 -100 V V(BR)EBO Emitter-base breakdown voltage IE=-5mA ,IC=0 -6 V VCEsat Collector-emitter saturation voltage IC=-5A; IB=-1A -1.8 V VBE Base-emitter on voltage IC=-1A ; VCE=-5V -1.5 V ICBO Collector cut-off current VCB=-30V; IE=0 -1 mA hFE-1 DC current gain IC=-1A ; VCE=-5V 35 200 hFE-2 DC current gain IC=-5A ; VCE=-5V 20 fT Transition frequency IC=-1A ; VCE=-5V 20 MHz hFE-1 Classifications A 35-70 B 60-120 C 100-200 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA756 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3