2SA757

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA757 DESCRIPTION ·With TO-3 package ·Complement to type 2SC897 APPLICATIONS ·For audio amplifier power output applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE -120 -100 -6 -7 -12 60 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SA757 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;RBE=∞ -100 V V(BR)CBO Collector-base breakdown voltage IC=-5mA ,IE=0 -120 V V(BR)EBO Emitter-base breakdown voltage IE=-5mA ,IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-5A; IB=-1A -1.8 V VBE Base-emitter on voltage IC=-1A ; VCE=-5V -1.5 V ICBO Collector cut-off current VCB=-30V; IE=0 -1 mA hFE-1 DC current gain IC=-1A ; VCE=-5V 25 200 hFE-2 DC current gain IC=-5A ; VCE=-5V 20 fT Transition frequency IC=-1A ; VCE=-5V 24 MHz hFE-1 Classifications A 25-60 B 50-120 C 100-200 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA757 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3