2SA758

INCHANGE Semiconductor isc Product Specification 2SA758 isc Silicon PNP Power Transistor DESCRIPTION ·High Power Dissipation: PC= 80W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -110V(Min.) ·Complement to Type 2SC898 APPLICATIONS ·Designed for use in audio amplifier power output stage and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -110 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature -12 A PC 80 W Tj 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification 2SA758 isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; RBE= ∞ -110 V V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA; IE= 0 -130 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -1A -1.8 V VBE(on) Base-Emitter On Voltage IC= -1A; VCE= -5V -1.5 V ICBO Collector Cutoff Current VCB= -30V; IE= 0 -1.0 mA hFE-1 DC Current Gain IC= -1A; VCE= -5V 25 200 hFE-2 DC Current Gain IC= -5A; VCE= -5V 20 fT Current-Gain—Bandwidth Product IC= -1A; VCE= -5V 20 MHz hFE-1 Classifications A 25-60 B 50-120 C 100-200 isc Website：www.iscsemi.cn