2SA765

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA765 DESCRIPTION ·With TO-66 package ·Low collector saturation voltage APPLICATIONS ·Desinged for general-purpose power amplifier and applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE -80 -80 -6 -6 40 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SA765 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 -80 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0 -80 V VCEsat Collector-emitter saturation voltage IC=-4A; IB=-0.4A -1.5 V VBEsat Base-emitter saturation voltage IC=-4A; IB=-0.4A -2.0 V ICBO Collector cut-off current VCB=-80V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-6V; IC=0 -10 μA hFE DC current gain IC=-1A ; VCE=-4V 50 fT Transition frequency IC=-0.5A ; VCE=-12V 10 MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA765 Fig.2 outline dimensions 3