2SA766

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA766 DESCRIPTION ·With TO-66 package ·High power dissipation ·Complement to type 2SC1450 APPLICATIONS ·Line-operated vertical deflection output ·Medium power amplifier PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC≤80℃ Open emitter Open base Open collector CONDITIONS VALUE -150 -150 -5 -0.4 -1.2 20 150 -65~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBE-1 VBE-2 ICBO hFE-1 hFE-2 fT PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-0.2A ;L=25mH,RBE=5kΩ IE=-1mA ;IC=0 IC=-1A; IB=-0.1A IC=-0.1A ; VCE=-5V IC=-0.5A ; VCE=-5V VCB=-60V; IE=0 IC=-0.1A ; VCE=-5V IC=-0.5A ; VCE=-5V IE=0.1A ; VCB=-10V 35 35 15 MIN -150 -5 TYP. 2SA766 MAX UNIT V V -1.0 -0.8 -1.0 -30 150 V V V μA MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA766 Fig.2 outline dimensions 3