2SA769

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA769 DESCRIPTION ·With TO-220 package ·Complement to type 2SC1827 APPLICATIONS ·For low frequency power amplifier applicattions PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -80 -80 -5 -4 30 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SA769 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ,IB=0 -80 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ,IE=0 -80 V VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.3A -1.0 V VBEsat Base-emitter saturation voltage IC=-3A; IB=-0.3A -1.5 V μA μA ICBO Collector cut-off current VCB=-80V; IE=0 -10 IEBO Emitter cut-off current VEB=-5V; IC=0 -10 hFE DC current gain IC=-1A ; VCE=-4V 60 240 fT Transition frequency IC=-0.5A ; VCE=-10V 10 MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA769 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3