2SA807

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA807 DESCRIPTION ·With TO-3 package ·Wide area of safe operation ·Complement to type 2SC1618 APPLICATIONS ·For power amplifier and general purpose applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base CONDITIONS VALUE -60 -60 -6 -6 -3 50 150 -65~150 UNIT V V V A A W ℃ ℃ Open collector PC Tj Tstg Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-50mA IB=0 IC=-3A; IB=-0.3A VCB=-60V; IE=0 VEB=-6V; IC=0 IC=-3A ; VCE=-4V IC=-0.5A ; VCE=-12V 20 10 MIN -60 TYP. 2SA807 MAX UNIT V -1.5 -1.0 -1.0 V mA mA MHz Switching times tr tstg tf Rise time Storage time Fall time VCC=-10V;IC=-3A; RL=3Ω IB1=-0.3A; IB2=50mA 1.2 1.8 0.3 μs μs μs 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA807 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3