2SA815

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA814 2SA815 DESCRIPTION ·With TO-220 package ·Complement to type 2SC1624/1625 ·High breakdown voltage APPLICATIONS ·Medium power amplifier applications ·Driver stage amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2SA814 VCBO Collector-base voltage 2SA815 2SA814 VCEO Collector-emitter voltage 2SA815 VEBO IC IE PC Tj Tstg Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base -100 -5 -1 1 15 150 -55~150 V A A W ℃ ℃ Open emitter -100 -120 V CONDITIONS VALUE -120 V UNIT Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SA814 V(BR)CEO Collector-emitter breakdown voltage 2SA815 V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 COB fT Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector output capacitance Transition frequency IE=-1.0mA ,IC=0 IC=-500mA; IB=-50mA B 2SA814 2SA815 CONDITIONS MIN -120 TYP. MAX UNIT IC=-10mA ,IB=0 -100 -5 -0.5 -1.0 -1.0 -1.0 70 40 30 10 30 240 V V V V μA μA IC=-500mA ; VCE=-5V VCB=-50V; IE=0 VEB=-5V; IC=0 IC=-150mA ; VCE=-5V IC=-500mA ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz IC=-150mA ; VCE=-5V pF MHz hFE-1 Classifications O 70-140 Y 120-240 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA814 2SA815 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3