2SA839

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA839 DESCRIPTION ·With TO-220 package ·Complement to type 2SC1669 ·High breakdown voltage APPLICATIONS ·Audio power amplifier applications ·Driver stage amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE -150 -150 -5 -1.5 1.5 25 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-10mA ,IB=0 IE=-1mA ,IC=0 IC=-0.5A; IB=-50mA IC=-0.5A ; VCE=-10V VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-0.5A ; VCE=-10V IC=-1A ; VCE=-10V IE=0 ; VCB=-10V;f=1MHz IC=-0.5A ; VCE=-10V 40 20 100 6 MIN -150 -5 TYP. 2SA839 MAX UNIT V V -1.5 -1.0 -20 -10 240 V V μA μA pF MHz hFE-1 Classifications R 40-80 O 70-140 Y 120-240 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA839 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3