2SA885

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SC1846 ·Low collector-emitter saturation voltage APPLICATIONS ·For low-frequency power amplification PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base 2SA885 · Absolute Maximun Ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak CONDITIONS Open emitter Open base Open collector VALUE -45 -35 -5 -1 -1.5 1.2*1 PC Collector power dissipation TC=25℃ 5* Tj Tstg Junction temperature Storage temperature 2 UNIT V V V A A W 150 -55~150 ℃ ℃ Note) *1: Without heat sink *2: With a 100 × 100 × 2 mm A1 heat sink Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO VCEsat ICBO ICEO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-2mA;IB=0 IC=-10μA ;IE=0 IC=-0.5A ;IB=-50mA VCB=-20V; IE=0 VCE=-20V; IB=0 VEB=-5V; IC=0 IC=-0.5A ; VCE=-10V IC=-1A ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz IC=50mA ; VCB=-10V,f=200MHz 85 50 20 200 MIN -35 -45 2SA885 TYP. MAX UNIT V V -0.5 -0.1 -100 -10 340 V μA μA μA 30 pF MHz hFE-1 Classifications Q 85-170 R 120-240 S 170-340 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA885 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA885 4 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA885 5