2SA886

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA886 DESCRIPTION ·With TO-126 package ·Complement to type 2SC1847 ·Low collector-emitter saturation voltage APPLICATIONS ·For low-frequency power amplification PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION · Absolute Maximun Ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Open emitter Open base Open collector CONDITIONS VALUE -50 -40 -5 -1.5 -3.0 1.2*1 PC Collector power dissipation TC=25℃ 5*2 Tj Tstg Junction temperature Storage temperature 150 -55~150 ℃ ℃ W UNIT V V V A A Note) *1: Without heat sink *2: With a 100 × 100 × 2 mm A1 heat sink Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO ICEO IEBO hFE COB fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-2mA;IB=0 IC=-1mA ;IE=0 IC=-1.5A ;IB=-0.15A IC=-2A ;IB=-0.2A B 2SA886 MIN -40 -50 TYP. MAX UNIT V V -1.0 -1.5 -1 -100 -10 80 45 150 220 V V μA μA μA VCB=-20V; IE=0 VCE=-10V; IB=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IE=0 ; VCB=-20V;f=1MHz IC=0.5A ; VCB=-5V,f=200MHz pF MHz hFE Classifications Q 80-160 R 120-220 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA886 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA886 4