2SA887

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA887 DESCRIPTION ·With TO-202 package ·Complement to type 2SC1848 APPLICATIONS ·Medium power amplifier PINNING(see Fig.2) PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-202) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 10 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -70 -50 -5 -2 -3 1.2 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SA887 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0 -50 V V(BR)CBO Collector-base breakdown voltage IC=-1mA; IE=0 -70 V VCEsat Collector-emitter saturation voltage IC=-1A ;IB=-0.1A B -0.6 -1.2 V VBEsat Base-emitter saturation voltage IC=-2A ;IB=-0.2 A B -1.0 -1.5 V hFE-1 DC current gain IC=-100mA ; VCE=-5V 30 hFE-2 DC current gain IC=-1A ; VCE=-5V 50 220 ICBO Collector cut-off current VCB=-40V; IE=0 -1.0 μA ICEO Collector cut-off current VCE=-20V; IB=0 -100 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 μA fT Transition frequency IE=0.5A ; VCB=-5V 150 MHz hFE-2 Classifications P 50-100 Q 80-160 R 120-220 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA887 Fig.2 outline dimensions 3