2SA900

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA900 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -18V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage ·Complement to Type 2SC1568 APPLICATIONS ·Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -20 V VCEO Collector-Emitter Voltage -18 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A ICP Collector Current-Pulse -2 A PC Collector Power Dissipation 1.2 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SA900 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0 IC= -10μA; IE= 0 IE= -10μA; IC= 0 -18 V V(BR)CBO Collector-Base Breakdown Voltage -20 V V(BR)EBO Emitter-Base Breakdown Voltage -5 V VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -50mA IC= -0.5A; IB= -50mA -0.5 V Base-Emitter Saturation Voltage -1.2 V μA μA ICBO Collector Cutoff Current VCB= -10V; IE= 0 -1 ICEO Collector Cutoff Current VCE= -18V; IB= 0 -10 hFE-1 DC Current Gain IC= -0.5A; VCE= -2V 90 470 hFE-2 DC Current Gain IC= -1.5A ; VCE= -2V 50 fT COB Current-Gain—Bandwidth Product IC= -50mA; VCE= -6V 200 MHz Output Capacitance IE=0; VCB= -6V, ftest= 1MHz 40 pF hFE-1 Classifications Q 90-155 R 130-210 S 180-280 T 250-360 U 330-470 isc Website：www.iscsemi.cn 2