2SA907

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA907/908/909 DESCRIPTION ·With TO-3 package ·Complement to type 2SC1584/1585/1586 APPLICATIONS ·For power switching and general purpose applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2SA907 VCBO Collector-base voltage 2SA908 2SA909 2SA907 VCEO Collector-emitter voltage 2SA908 2SA909 VEBO IC IB B CONDITIONS VALUE -100 UNIT Open emitter -150 -200 -100 V Open base -150 -200 V Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Open collector -6 -15 -5 V A A W ℃ ℃ PC Tj Tstg TC=25℃ 150 150 -65~150 Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SA907 V(BR)CEO Collector-emitter breakdown voltage 2SA908 2SA909 VCEsat Collector-emitter saturation voltage 2SA907 ICBO Collector cut-off current 2SA908 2SA909 IEBO hFE fT Emitter cut-off current DC current gain Transition frequency IC=-10A; IB=-1A VCB=-100V; IE=0 VCB=-150V; IE=0 VCB=-200V; IE=0 VEB=-6V; IC=0 IC=-5A ; VCE=-4V IC=-0.5A ; VCE=-12V IC=-50mA ;IB=0 CONDITIONS 2SA907/908/909 MIN -100 -150 -200 TYP. MAX UNIT V -3.0 V -1.0 mA -1.0 30 10 mA MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA907/908/909 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3