2SA913

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA913 2SA913A DESCRIPTION ·With TO-220 package ·Complement to type 2SC1913/1913A ·Large collector power dissipation ·High VCEO APPLICATIONS ·Audio frequency high power driver PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2SA913 VCBO Collector-base voltage 2SA913A 2SA913 VCEO Collector-emitter voltage 2SA913A VEBO IC ICM PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base -180 -5 -1 -1.5 15 150 -55~150 V A A W ℃ ℃ Open emitter -180 -150 V CONDITIONS VALUE -150 V UNIT Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SA913 IC=-0.1mA ,IB=0 B 2SA913 2SA913A CONDITIONS MIN -150 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V -180 2SA913A IE=-10μA ,IC=0 IC=-0.5A; IB=-50mA IC=-0.3A; IB=-30mA IC=-0.5A; IB=-50mA V(BR)EBO Emitter-base breakdown voltage 2SA913 2SA913A 2SA913 2SA913A -5 -1.0 V VCEsat Collector-emitter saturation voltage V -1.5 VBEsat Base-emitter saturation voltage -1.5 IC=-0.3A; IB=-30mA VCB=-120V; IE=0 VEB=-4V; IC=0 IC=-150mA ; VCE=-10V IC=-500mA ; VCE=-5V IE=0 ;VCB=-100V;f=1MHz IC=50mA ; VCE=-10V 120 65 50 15 -1 -1 330 V ICBO IEBO hFE-1 hFE-2 COB fT Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency μA μA pF MHz hFE-1 Classifications P 65-110 Q 90-155 R 130-220 S 185-330 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA913 2SA913A Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3