2SA969

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA969 DESCRIPTION ·With TO-66 package ·Complement to type 2SC2239 ·High breakdown votage APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications PINNING(See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IE PT Tj Tstg PARAMETER CONDITIONS Open emitter Open base Open collector VALUE -160 -160 -5 -1.5 1.5 TC=25℃ 25 150 -55~150 UNIT V V V A A W ℃ ℃ Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Total power dissipation Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE Cob fT PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-10mA; IB=0 IE=-1mA; IC=0 IC=-500mA; IB=-50mA B 2SA969 MIN -160 -5 TYP. MAX UNIT V V -1.5 -1.0 -1.0 -1.0 70 30 100 240 V V μA μA IC=-500mA ; VCE=-5V VCB=-160V ;IE=0 VEB=-5V; IC=0 IC=-100mA ; VCE=-5V IE=0 ; VCB=-10V,f=1MHz IC=-100mA ; VCE=10V pF MHz hFE Classifications O 70-140 Y 120-240 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA969 Fig.2 Outline dimensions 3