2SA981

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA980/981/982 DESCRIPTION ·With TO-3 package ·Complement to type 2SC2260/2261/2262 APPLICATIONS ·For power switching and general purpose applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2SA980 VCBO Collector-base voltage 2SA981 2SA982 2SA980 VCEO Collector-emitter voltage 2SA981 2SA982 VEBO IC IB PC Tj Tstg Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE -100 -120 -140 -100 -120 -140 -6 -8 -3 80 150 -65~150 V A A W ℃ ℃ V V UNIT Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SA980 V(BR)CEO Collector-emitter breakdown voltage 2SA981 2SA982 VCEsat Collector-emitter saturation voltage 2SA980 ICBO Collector cut-off current 2SA981 2SA982 IEBO hFE fT Emitter cut-off current DC current gain Transition frequency IC=-3A; IB=-0.3A VCB=-100V; IE=0 VCB=-120V; IE=0 VCB=-140V; IE=0 VEB=-6V; IC=0 IC=-3A ; VCE=-4V IC=-0.5A ; VCE=-12V IC=-50mA ;IB=0 CONDITIONS 2SA980/981/982 MIN -100 -120 -140 TYP. MAX UNIT V -1.5 V -0.1 mA -0.1 30 20 mA MHz Switching times tr ts tf Rise time Storage time Fall time IC=-3A;RL=4Ω IB1=-0.2A; IB2=0.1A VCC=-12V 0.85 2.0 0.3 μs μs μs 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA980/981/982 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3