2SA985

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA985 2SA985A DESCRIPTION ·With TO-220 package ·Complement to type 2SC2275/2275A ·High breakdown voltage APPLICATIONS ·For low frequency and high frequency power amplifer applicatons PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2SA985 VCBO Collector-base voltage 2SA985A 2SA985 VCEO Collector-emitter voltage 2SA985A VEBO IC ICM IB B CONDITIONS VALUE -120 UNIT Open emitter -150 -120 Open base -150 Open collector -5 -1.5 -3.0 -0.3 Ta=25℃ 1.5 V V Emitter-base voltage Collector current Collector current-peak Base current V A A A PT Total power dissipation TC=25℃ 25 150 -55~150 W Tj Tstg Junction temperature Storage temperature ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SA985 2SA985A MIN TYP. MAX UNIT 2SA985 V(BR)CEO Collector-emitter breakdown voltage 2SA985A IC=-25mA ,IB=0 -120 V -150 VCEsat Collector-emitter saturation voltage IC=-1A; IB=-0.1A -0.3 -2.0 V VBEsat Base-emitter saturation voltage IC=-1A; IB=-0.1A -0.9 -1.5 V ICBO Collector cut-off current VCB=-120V; IE=0 -1.0 μA IEBO Emitter cut-off current VEB=-3V; IC=0 -1.0 μA hFE-1 DC current gain IC=-5mA ; VCE=-5V 35 hFE-2 DC current gain IC=-0.3A ; VCE=-5V 60 150 320 COB Output capacitance IE=0 ; VCB=-10V,f=1MHz 29 pF fT Transition frequency IC=-0.2A ; VCE=-5V 180 MHz hFE-2 Classifications R 60-120 Q 100-200 P 160-320 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA985 2SA985A Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3