2SB1005

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1005 DESCRIPTION ・With TO-220C package ・High DC Current Gain ・DARLINGTON APPLICATIONS ・For audio frequency power amplifier applications PINNING PIN 1 2 3 Base Collector; connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-DC Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -50 -50 -5 -4 30 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO VCEsat VCEsat ICBO IEBO hFE-1 hFE-2 VF PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Diode forward voltage CONDITIONS IC=-30mA, IB=0 IC=-1mA, IE=0 IC=-1.5A ,IB=-30mA IC=-4A ,IB=-40mA VCB=-50V, IE=0 VEB=-5V; IC=0 IC=-1.5A ; VCE=-3V IC=-4A ; VCE=-3V IF=-4A 750 100 MIN -50 -50 2SB1005 TYP. MAX UNIT V V -2.5 -4.0 -0.1 -2.0 V V mA mA 3.5 V 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1005 Fig.2 Outline dimensions 3