2SB1016

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1016 DESCRIPTION ・With TO-220Fa package ・High breakdown voltage ・Low collector saturation voltage ・Complement to type 2SD1407 APPLICATIONS ・Power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -100 -100 -5 -5 -0.5 30 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1016 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-50mA; IB=0 IC=-4A ;IB=-0.4A IC=-4A; VCE=-5V VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-4A ; VCE=-5V IC=-1A; VCE=-5V f=1MHz ; VCB=-10V;IE=0 40 20 5 270 MHz pF MIN -100 -2.0 -1.5 -100 -1 240 TYP. MAX UNIT V V V μA mA hFE-1 Classifications R 40-80 O 70-140 Y 120-240 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1016 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1016 4