2SB1017

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1017 DESCRIPTION ・With TO-220Fa package ・Complement to type 2SD1408 APPLICATIONS ・For power amplifications ・Recommended for 20-25W high-fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Emitter Collector Base DESCRIPTION ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 25 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -80 -80 -5 -4 -0.4 2.0 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SB1017 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0 -80 V VCEsat VBE Collector-emitter saturation voltage IC=-3A; IB=-0.3A IC=-3A ;VCE=-5V -1.0 -1.7 V Base-emitter on voltage -1.0 -1.5 V μA μA ICBO Collector cut-off current VCB=-80V; IE=0 -30 IEBO Emitter cut-off current VEB=-5V; IC=0 -100 hFE-1 DC current gain IC=-0.5A ; VCE=-5V 40 240 hFE-2 DC current gain IC=-3A ; VCE=-5V 15 fT COB Transition frequency IC=-0.5A; VCE=-5V IE=0, f=1MHz ; VCB=-10V 9 MHz Collector output capacitance 130 pF hFE-1 Classifications R 40-80 O 70-140 Y 120-240 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1017 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1017 4