2SB1018

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1018 DESCRIPTION ・With TO-220F package ・High collector current ・Low collector saturation voltage ・Complement to type 2SD1411 APPLICATIONS ・Power amplifier applications ・High current switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Base current TC=25℃ PC Collector power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 2 150 -55~150 ℃ ℃ Open emitter Open base Open collector CONDITIONS VALUE -100 -80 -5 -7 -1 30 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1018 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter breakdownvoltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-50mA; IB=0 IC=-4A ;IB=-0.4A IC=-4A ;IB=-0.4A VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-1V IC=-4A ; VCE=-1V VCE=-4V;IC=-1A f=1MHz ; VCB=-10V;IE=0 70 30 10 250 MHz pF MIN -80 -0.3 -0.9 -0.5 -1.4 -5 -5 240 TYP. MAX UNIT V V V μA μA Switching times ton tstg tf Turn-on time Storage time Fall time IB1=-IB2=-0.3A VCC=30V ,RL=10Ω 0.4 2.5 0.5 μs μs μs hFE-1 Classifications O 70-140 Y 120-240 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1018 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1018 4