2SB1021

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1021 DESCRIPTION ・With TO-220Fa package ・High DC current gain ・Low saturation voltage ・Complement to type 2SD1416 APPLICATIONS ・High power switching applications ・Hammer drive,pulse motor drive applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Base current Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 30 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -80 -80 -5 -7 -0.2 2.0 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1021 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat-1 VCEsat-2 VBEsat ICBO IEBO hFE-1 hFE-2 PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-50mA; IB=0 IC=-3A ;IB=-6mA IC=-7A ;IB=-14mA IC=-3A ;IB=-6mA VCB=-80V; IE=0 VEB=-5V; IC=0 IC=-3A ; VCE=-3V IC=-7A ; VCE=-3V 2000 1000 MIN -80 -1.5 -2.0 -2.5 -100 -4.0 15000 TYP. MAX UNIT V V V V μA mA Switching times ton tstg tf Turn-on time Storage time Fall time IB1=-IB2=-6mA; VCC≈-45V RL=15Ω 0.8 2.0 2.5 μs μs μs 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1021 Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3